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Vishay General Semiconductor - Diodes Division FEPB16GTHE3_A/P

Part No.:
FEPB16GTHE3_A/P
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
DIODE ARRAY GP 400V 8A TO263AB
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FEPB16GTHE3_A/P Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io) (per Diode):
8A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D2PAK)
Image FEPB16GTHE3_A/P FEPB16GTHE3_A/I
Part Number FEPB16GTHE3_A/P FEPB16GTHE3_A/I
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series - -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tube Tape & Reel (TR)
Product Status Obsolete Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Technology Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V
Current - Average Rectified (Io) (per Diode) 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 8 A 1.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 400 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AB (D2PAK) TO-263AB (D2PAK)
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