EPC Space, LLC FBG30N04CSH

Product attributes

Attribute value

Manufacturer:

EPC Space, LLC

Series:

eGaN®

Package/Case:

4-SMD, No Lead

Packaging:

Bulk

Product Status:

Active

Technology:

GaNFET (Gallium Nitride)

Configuration:

2 N-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

300V

Current - Continuous Drain (Id) @ 25°C:

4A (Tc)

Rds On (Max) @ Id, Vgs:

404mOhm @ 4A, 5V

Vgs(th) (Max) @ Id:

2.8V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:

2.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

450pF @ 150V

Power - Max:

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-SMD