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Infineon Technologies F415MR12W2M1B76BOMA1
- Part No.:
- F415MR12W2M1B76BOMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Description:
- MOSFET 4N-CH 1200V 75A AG-EASY1B
- Quantity:
Unit Price:$0
Ext Price:$0
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F415MR12W2M1B76BOMA1 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™ CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tj)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs:
- 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5520pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B-2
| Image |  |
| Part Number | F415MR12W2M1B76BOMA1 |
| Manufacturer | Infineon Technologies |
| Series | EasyPACK™ CoolSiC™ |
| Package/Case | Module |
| Packaging | Tray |
| Product Status | Obsolete |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tj) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 75A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 30mA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 5520pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | AG-EASY1B-2 |
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