EPC EPC2105

Product attributes

Attribute value

Manufacturer:

EPC

Series:

eGaN®

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

GaNFET (Gallium Nitride)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

9.5A, 38A

Rds On (Max) @ Id, Vgs:

14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 2.5mA, 2.5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:

2.5nC @ 5V, 10nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

300pF @ 40V, 1100pF @ 40V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die