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Diodes Incorporated DDTB113EC-7-F

Part No.:
DDTB113EC-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Description:
TRANS PREBIAS PNP 50V SOT23-3
Quantity:

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DDTB113EC-7-F Information

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Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Image DDTB113EC-7-F
Part Number DDTB113EC-7-F
Manufacturer Diodes Incorporated
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
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