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| Image | ![]() |
| Part Number | DD1000S33HE3B60BOSA1 |
| Manufacturer | Infineon Technologies |
| Series | - |
| Package/Case | Module |
| Packaging | Tray |
| Product Status | Obsolete |
| Diode Configuration | 2 Independent |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Current - Average Rectified (Io) (per Diode) | 1000A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 3.85 V @ 1000 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | AG-IHVB130-3 |
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