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WeEn Semiconductors BYV410X-600/L01Q

Part No.:
BYV410X-600/L01Q
Manufacturer:
WeEn Semiconductors
Category:
Diode Arrays
Package:
TO-220-3 Full Pack, Isolated Tab, Formed Leads
Description:
DIODE ARRAY GP 600V 20A TO-220F
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Unit Price:$0

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BYV410X-600/L01Q Information

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Attribute value
Manufacturer:
WeEn Semiconductors
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab, Formed Leads
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io) (per Diode):
20A
Voltage - Forward (Vf) (Max) @ If:
2.1 V @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Image BYV410X-600,127 BYV410X-600PQ BYV410X-600/L01Q
Part Number BYV410X-600,127 BYV410X-600PQ BYV410X-600/L01Q
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Series - - -
Package/Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab, Formed Leads
Packaging Tube Tube Bulk
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) (per Diode) 10A 20A 20A
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 10 A 1.75 V @ 16 A 2.1 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 55 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 10 µA @ 600 V 50 µA @ 600 V
Operating Temperature - Junction 150°C (Max) 175°C (Max) 150°C
Grade - - -
Qualification - - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220F TO-220F TO-220F
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