Rohm Semiconductor BSM600C12P3G201

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Not For New Designs

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

600A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

5.6V @ 182mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

28000 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

2460W (Tc)

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Module