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Infineon Technologies BSC150N03LD

Part No.:
BSC150N03LD
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Description:
MOSFET 2N-CH 30V 8A 8TDSON
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Unit Price:$0

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BSC150N03LD Information

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 3
Package/Case:
8-PowerVDFN
Packaging:
Bulk
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8A
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 15V
Power - Max:
26W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4
Image BSC150N03LDGATMA1 BSC150N03LD
Part Number BSC150N03LDGATMA1 BSC150N03LD
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ OptiMOS™ 3
Package/Case 8-PowerVDFN 8-PowerVDFN
Packaging Tape & Reel (TR) Bulk
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 8A 8A
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V 6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V 1100pF @ 15V
Power - Max 26W 26W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8-4
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