Microsemi Corporation APTSM120AM08CT6AG

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

SP6

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Dual), Schottky

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

370A (Tc)

Rds On (Max) @ Id, Vgs:

10mOhm @ 200A, 20V

Vgs(th) (Max) @ Id:

3V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:

1360nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

2300W

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP6