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STMicroelectronics STF10N65K3
- Part No.:
- STF10N65K3
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- Description:
- STF10N65K3 - 650V N-Channel Power MOSFET (SuperMESH™ K3, TO-220FP)STF10N65K3 is a high-voltage N-channel power MOSFET from STMicroelectronics, based on advanced SuperMESH™ K3 technology. It is optimized for high-efficiency switching applications, offerin…
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Product Details
STF10N65K3 - 650V N-Channel Power MOSFET (SuperMESH™ K3, TO-220FP)
STF10N65K3 is a high-voltage N-channel power MOSFET from STMicroelectronics, based on advanced SuperMESH™ K3 technology. It is optimized for high-efficiency switching applications, offering low RDS(on), fast switching performance, and excellent reliability in offline power conversion systems.
This page is intended for engineering reference and component selection. Always validate final parameters using the official datasheet before design finalization.
Overview
STF10N65K3 is designed for high-voltage power switching applications such as offline SMPS, LED drivers, and industrial power supplies. Built on ST's SuperMESH™ K3 platform, it delivers improved efficiency through reduced conduction and switching losses.
This device features a 650V drain-source voltage rating and optimized gate charge characteristics, making it suitable for high-frequency switching designs. The insulated TO-220FP package provides enhanced safety and thermal isolation, simplifying system design in high-voltage environments.
Key Advantages
Low RDS(on) and reduced gate charge improve efficiency in power conversion systems.
Suitable for offline AC-DC applications and industrial power designs.
TO-220FP insulated package enhances heat dissipation and electrical isolation.
Excellent switching characteristics for flyback, forward, and PFC topologies.
Feature Summary
650V rated for high-voltage applications.
Typical low RDS(on) reduces conduction losses.
Optimized gate charge enables high-frequency operation.
Improved efficiency and robustness compared to previous generations.
Package & Footprint
The STF10N65K3 is housed in a TO-220FP (fully insulated) package, widely used in power electronics for its excellent thermal and electrical isolation properties.
- Ensure proper heatsink design for high-power operation.
- Insulated package reduces need for additional isolation hardware.
- Follow recommended PCB layout for thermal performance.
Refer to the official datasheet for mechanical dimensions and footprint recommendations.
Pin Functions
The STF10N65K3 uses a standard MOSFET pin configuration.
Key Specifications
| Device Type | N-Channel Power MOSFET |
|---|---|
| Technology | SuperMESH™ K3 |
| Drain-Source Voltage | 650V |
| Package | TO-220FP |
| Mounting Type | Through Hole |
| Application | SMPS, Power Conversion |
| Operating Temperature | -55°C to +150°C |
| Base Product | STF10N65 |
Equivalent
Alternative MOSFETs with similar specifications include:
- CJPF10N65 – JSCJ, 650V MOSFET, pin-to-pin compatible
- CS10N65FA9R – CR Micro, 650V MOSFET, similar performance
- AP65AN750IN – APEC, high-voltage MOSFET alternative
- NCE65TF360F – NCE Power, Super Junction MOSFET, similar application
Verify electrical characteristics and thermal performance before substitution.
Manufacturer Information
STMicroelectronics is a global leader in semiconductor solutions, specializing in power electronics, analog ICs, and embedded systems.
- Strength: Power MOSFETs, automotive ICs, industrial solutions
- Markets: Automotive, industrial, consumer electronics
- Resources: Datasheets, evaluation boards, application notes
Applications
Typical applications include:
Switching Power Supplies
Flyback and forward SMPS designs.
LED Drivers
High-efficiency constant current drivers.
Industrial Power
AC-DC converters and control systems.
Adapters & Chargers
Offline power adapters and battery chargers.
Quality & Authenticity
- Strict incoming inspection and traceability
- ESD-safe handling procedures
- Anti-counterfeit verification available
FAQ
Is STF10N65K3 suitable for SMPS?
Can it replace older MOSFETs?
Disclaimer
STF10N65K3 Information
- Specifications
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH3™
- Package/Case:
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1180 pF @ 25 V
- FET Feature:
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Qualification:
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
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