YAGEO XSEMI XP10TN135H

Product attributes

Attribute value

Manufacturer:

YAGEO XSEMI

Series:

XP10TN135

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

135mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

928 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 20.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252