Rohm Semiconductor RQ3G120BJFRATCB

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

48mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 279µA

Gate Charge (Qg) (Max) @ Vgs:

15.5 nC @ 10 V

Vgs (Max):

+5V, -20V

Input Capacitance (Ciss) (Max) @ Vds:

750 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

40W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

8-HSMT (3.2x3)