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Toshiba Semiconductor and Storage RN4606(TE85L,F)

Part No.:
RN4606(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SC-74, SOT-457
Description:
TRANS NPN/PNP PREBIAS 0.3W SM6
Quantity:

Unit Price:$0

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RN4606(TE85L,F) Information

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Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100µA (ICBO)
Frequency - Transition:
200MHz, 250MHz
Power - Max:
300mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SM6
Image RN4606(TE85L,F)
Part Number RN4606(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case SC-74, SOT-457
Packaging Tape & Reel (TR)
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100µA (ICBO)
Frequency - Transition 200MHz, 250MHz
Power - Max 300mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SM6
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