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Toshiba Semiconductor and Storage RN2971FE(TE85L,F)

Part No.:
RN2971FE(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Description:
TRANS 2PNP PREBIAS 0.1W ES6
Quantity:

Unit Price:$0

Ext Price:$0

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RN2971FE(TE85L,F) Information

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Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
10kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200MHz
Power - Max:
100mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Image RN2971FE(TE85L,F)
Part Number RN2971FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Product Status Obsolete
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package ES6
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