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Toshiba Semiconductor and Storage RN2506(TE85L,F)

Part No.:
RN2506(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SC-74A, SOT-753
Description:
TRANS 2PNP PREBIAS 0.3W SMV
Quantity:

Unit Price:$0

Ext Price:$0

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RN2506(TE85L,F) Information

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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-74A, SOT-753
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200MHz
Power - Max:
300mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMV
Image RN2506(TE85L,F)
Part Number RN2506(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case SC-74A, SOT-753
Packaging Tape & Reel (TR)
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 300mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SMV
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