Toshiba Semiconductor and Storage RN1910FE(T5L,F,T)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

Transistor Type:

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

4.7kOhms

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

100nA (ICBO)

Frequency - Transition:

250MHz

Power - Max:

100mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6