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Toshiba Semiconductor and Storage RN1901FE,LXHF(CT

Part No.:
RN1901FE,LXHF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Description:
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
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RN1901FE,LXHF(CT Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz
Power - Max:
100mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Image RN1901FE,LXHF(CT RN1901FETE85LF
Part Number RN1901FE,LXHF(CT RN1901FETE85LF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - -
Package/Case SOT-563, SOT-666 SOT-563, SOT-666
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms
Resistor - Emitter Base (R2) 4.7kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA 100nA (ICBO)
Frequency - Transition 250MHz 250MHz
Power - Max 100mW 100mW
Grade Automotive -
Qualification AEC-Q101 -
Mounting Type Surface Mount Surface Mount
Supplier Device Package ES6 ES6
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