Rohm Semiconductor R6002JND4TL1

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-261-3

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V

Rds On (Max) @ Id, Vgs:

3.25Ohm @ 1A, 15V

Vgs(th) (Max) @ Id:

7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

7 nC @ 15 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

130 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

6.6W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223-3