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onsemi MUN5113DW1T1

Part No.:
MUN5113DW1T1
Manufacturer:
onsemi
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-TSSOP, SC-88, SOT-363
Description:
TRANS 2PNP PREBIAS 0.25W SOT363
Quantity:

Unit Price:$0

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MUN5113DW1T1 Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Bulk
Product Status:
Active
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
47kOhm
Resistor - Emitter Base (R2):
47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
187mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-88/SC70-6/SOT-363
Image MUN5113DW1T1G MUN5113DW1T1
Part Number MUN5113DW1T1G MUN5113DW1T1
Manufacturer onsemi onsemi
Series - -
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Bulk
Product Status Active Active
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 47kOhm 47kOhm
Resistor - Emitter Base (R2) 47kOhm 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 187mW 187mW
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363
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