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Toshiba Semiconductor and Storage MT4S300U(TE85L,O,F
- Part No.:
- MT4S300U(TE85L,O,F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Description:
- X34 PB-F RADIO-FREQUENCY SIGE HE
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
MT4S300U(TE85L,O,F Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 4V
- Frequency - Transition:
- 26.5GHz
- Noise Figure (dB Typ @ f):
- 0.55dB @ 2GHz
- Gain:
- 16.9dB
- Power - Max:
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 10mA, 3V
- Current - Collector (Ic) (Max):
- 50mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USQ
| Image |  |
| Part Number | MT4S300U(TE85L,O,F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Package/Case | SC-82A, SOT-343 |
| Packaging | Tape & Reel (TR) |
| Product Status | Last Time Buy |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4V |
| Frequency - Transition | 26.5GHz |
| Noise Figure (dB Typ @ f) | 0.55dB @ 2GHz |
| Gain | 16.9dB |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 3V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | USQ |
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