Toshiba Semiconductor and Storage MT3S113(TE85L,F)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Last Time Buy

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

5.3V

Frequency - Transition:

12.5GHz

Noise Figure (dB Typ @ f):

1.45dB @ 1GHz

Gain:

11.8dB

Power - Max:

800mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

200 @ 30mA, 5V

Current - Collector (Ic) (Max):

100mA

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

S-Mini