Samsung Semiconductor, Inc. K4F8E304HB-MGCJ

Product attributes

Attribute value

Manufacturer:

Samsung Semiconductor, Inc.

Series:

-

Package/Case:

200-TFBGA

Packaging:

Tray

Product Status:

Active

Programmable:

Not Verified

Memory Type:

Volatile

Memory Format:

DRAM

Technology:

-

Memory Size:

8Gbit

Memory Organization:

256M x 32

Memory Interface:

Parallel

Clock Frequency:

1866 MHz

Write Cycle Time - Word, Page:

-

Access Time:

-

Voltage - Supply:

1.1V

Operating Temperature:

-25°C ~ 85°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

-