IXYS IXTU01N100D

Product attributes

Attribute value

Manufacturer:

IXYS

Series:

Depletion

Package/Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel, Depletion Mode

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1000 V

Current - Continuous Drain (Id) @ 25°C:

400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

0V

Rds On (Max) @ Id, Vgs:

80Ohm @ 50mA, 0V

Vgs(th) (Max) @ Id:

4.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:

5.8 nC @ 5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

100 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.1W (Ta), 25W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-251AA