Nexperia USA Inc. GANB4R8-040CBAZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

22-UFBGA, WLCSP

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

4.8mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

15.8 nC @ 5 V

Vgs (Max):

40V

Input Capacitance (Ciss) (Max) @ Vds:

887 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

13W (Ta)

Operating Temperature:

-40°C ~ 125°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

22-WLCSP (2.1x2.1)