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Rohm Semiconductor EMB10T2R

Part No.:
EMB10T2R
Manufacturer:
Rohm Semiconductor
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Description:
TRANS 2PNP PREBIAS 0.15W EMT6
Quantity:

Unit Price:$0

Ext Price:$0

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EMB10T2R Information

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Product attributes
Attribute value
Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
2.2kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz
Power - Max:
150mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
EMT6
Image EMB10T2R
Part Number EMB10T2R
Manufacturer Rohm Semiconductor
Series -
Package/Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package EMT6
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