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Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F)
- Part No.:
- 2SK879-Y(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- JFETs
- Package:
- SC-70, SOT-323
- Description:
- JFET N-CH 0.1W USM
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
2SK879-Y(TE85L,F) Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Voltage - Breakdown (V(BR)GSS):
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Drain (Idss) @ Vds (Vgs=0):
- 1.2 mA @ 10 V
- Current Drain (Id) - Max:
- -
- Voltage - Cutoff (VGS off) @ Id:
- 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds:
- 8.2pF @ 10V
- Resistance - RDS(On):
- -
- Power - Max:
- 100 mW
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USM
| Image |  |
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| Part Number | 2SK879-Y(TE85L,F) | 2SK879-GR(TE85L,F) |
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage |
| Series | - | - |
| Package/Case | SC-70, SOT-323 | SC-70, SOT-323 |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | - | - |
| Drain to Source Voltage (Vdss) | - | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V | 2.6 mA @ 10 V |
| Current Drain (Id) - Max | - | - |
| Voltage - Cutoff (VGS off) @ Id | 400 mV @ 100 nA | 400 mV @ 100 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V | 8.2pF @ 10V |
| Resistance - RDS(On) | - | - |
| Power - Max | 100 mW | 100 mW |
| Operating Temperature | 125°C (TJ) | 125°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | USM | USM |
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