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onsemi SMUN5216DW1T1G

Part No.:
SMUN5216DW1T1G
Manufacturer:
onsemi
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-TSSOP, SC-88, SOT-363
Description:
TRANS 2NPN PREBIAS 0.187W SOT363
Quantity:

Unit Price:$0

Ext Price:$0

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SMUN5216DW1T1G Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
187mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SC-88/SC70-6/SOT-363
Image SMUN5216DW1T1G SMUN5216DW1T1G-M02
Part Number SMUN5216DW1T1G SMUN5216DW1T1G-M02
Manufacturer onsemi onsemi
Series - *
Package/Case 6-TSSOP, SC-88, SOT-363 -
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) -
Current - Collector (Ic) (Max) 100mA -
Voltage - Collector Emitter Breakdown (Max) 50V -
Resistor - Base (R1) 4.7kOhms -
Resistor - Emitter Base (R2) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition - -
Power - Max 187mW -
Grade Automotive -
Qualification AEC-Q101 -
Mounting Type Surface Mount -
Supplier Device Package SC-88/SC70-6/SOT-363 -
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