onsemi NXH004P120M3F2PTNG

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

338A (Tj)

Rds On (Max) @ Id, Vgs:

5.5mOhm @ 200A, 18V

Vgs(th) (Max) @ Id:

4.4V @ 120mA

Gate Charge (Qg) (Max) @ Vgs:

876nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

16410pF @ 800V

Power - Max:

1.1kW (Tj)

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

36-PIM (56.7x62.8)