onsemi NVXK2TR80WDT

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

32-PowerDIP Module (1.311", 33.30mm)

Packaging:

Tube

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel (Half Bridge)

FET Feature:

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

20A (Tc)

Rds On (Max) @ Id, Vgs:

116mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

4.3V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

56nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

1154pF @ 800V

Power - Max:

82W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

APM32