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onsemi NVMFS4C306NWFT1G

Part No.:
NVMFS4C306NWFT1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerTDFN, 5 Leads
Description:
POWER MOSFET 30V, 116A, 3.4 M, S
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NVMFS4C306NWFT1G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerTDFN, 5 Leads
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
20.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1683 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 36.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
5-DFNW (4.9x5.9) (8-SOFL-WF)
Image NVMFS4C306NWFT1G
Part Number NVMFS4C306NWFT1G
Manufacturer onsemi
Series -
Package/Case 8-PowerTDFN, 5 Leads
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 36.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
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