onsemi NTMT190N65S3H

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

SuperFET® III

Package/Case:

4-PowerTSFN

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

190mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:

4V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs:

31 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1600 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

129W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-TDFN (8x8)