onsemi NTMFD1D4N02P1E

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

8-PowerWDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Asymmetrical

FET Feature:

-

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)

Rds On (Max) @ Id, Vgs:

3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA, 2V @ 800µA

Gate Charge (Qg) (Max) @ Vgs:

7.2nC @ 4.5V, 21.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1180pF @ 13V, 3603pF @ 13V

Power - Max:

960mW (Ta), 1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PQFN (5x6)