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onsemi NIF9N05ACLT1G

Part No.:
NIF9N05ACLT1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Description:
POWER MOSFET, N-CHANNEL, LOGIC L
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NIF9N05ACLT1G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
59 V
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3.5V, 10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
4.5 nC @ 4.5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 35 V
FET Feature:
-
Power Dissipation (Max):
1.69W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223 (TO-261)
Image NIF9N05ACLT1G
Part Number NIF9N05ACLT1G
Manufacturer onsemi
Series -
Package/Case TO-261-4, TO-261AA
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 59 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 35 V
FET Feature -
Power Dissipation (Max) 1.69W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-223 (TO-261)
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