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onsemi MTBV30P06VT4G

Part No.:
MTBV30P06VT4G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
POWER MOSFET -60V -30A 80 MOHM S
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MTBV30P06VT4G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
2190 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 125W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Image MTBV30P06VT4G
Part Number MTBV30P06VT4G
Manufacturer onsemi
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK
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