Infineon Technologies IRL6372PBF

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tube

Product Status:

Discontinued at Digi-Key

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

8.1A

Rds On (Max) @ Id, Vgs:

17.9mOhm @ 8.1A, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1020pF @ 25V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO