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Infineon Technologies IRFHE4250DTRPBF

Part No.:
IRFHE4250DTRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
32-PowerWFQFN
Description:
MOSFET 2N-CH 25V 86A/303A 32QFN
Quantity:

Unit Price:$0

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IRFHE4250DTRPBF Information

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Manufacturer:
Infineon Technologies
Series:
FASTIRFET™
Package/Case:
32-PowerWFQFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
86A, 303A
Rds On (Max) @ Id, Vgs:
2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1735pF @ 13V
Power - Max:
156W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-PQFN (6x6)
Image IRFHE4250DTRPBF
Part Number IRFHE4250DTRPBF
Manufacturer Infineon Technologies
Series FASTIRFET™
Package/Case 32-PowerWFQFN
Packaging Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 86A, 303A
Rds On (Max) @ Id, Vgs 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V
Power - Max 156W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 32-PQFN (6x6)
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