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Infineon Technologies IRF7313TRPBFXTMA1

Part No.:
IRF7313TRPBFXTMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 30V 6.5A 8DSO-902
Quantity:

Unit Price:$0

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IRF7313TRPBFXTMA1 Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.5A (Ta)
Rds On (Max) @ Id, Vgs:
29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 25V
Power - Max:
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8-902
Image IRF7313TRPBFXTMA1
Part Number IRF7313TRPBFXTMA1
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Rds On (Max) @ Id, Vgs 29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-DSO-8-902
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