Infineon Technologies IRF5810

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

SOT-23-6 Thin, TSOT-23-6

Packaging:

Tube

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 P-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

2.9A

Rds On (Max) @ Id, Vgs:

90mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

650pF @ 16V

Power - Max:

960mW

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP