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Infineon Technologies IQE006NE2LM5CGATMA1

Part No.:
IQE006NE2LM5CGATMA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET N-CH 25V 41A/298A PQFN
Quantity:

Unit Price:$0

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IQE006NE2LM5CGATMA1 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
0.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
82.1 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5453 pF @ 12 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 89W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TTFN-9-1
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