Infineon Technologies IQE006NE2LM5CGATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ 5

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25 V

Current - Continuous Drain (Id) @ 25°C:

41A (Ta), 298A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

0.65mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

82.1 nC @ 10 V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

5453 pF @ 12 V

FET Feature:

-

Power Dissipation (Max):

2.1W (Ta), 89W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TTFN-9-1