Infineon Technologies IQE004NE1LM7CGSCATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ 7

Package/Case:

9-PowerWDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

15 V

Current - Continuous Drain (Id) @ 25°C:

58A (Ta), 379A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 7V

Rds On (Max) @ Id, Vgs:

0.45mOhm @ 30A, 7V

Vgs(th) (Max) @ Id:

2V @ 432µA

Gate Charge (Qg) (Max) @ Vgs:

55 nC @ 7 V

Vgs (Max):

±7V

Input Capacitance (Ciss) (Max) @ Vds:

6240 pF @ 7.5 V

FET Feature:

-

Power Dissipation (Max):

2.1W (Ta), 89W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-WHTFN-9