Infineon Technologies IPG20N10S4L35AATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

20A

Rds On (Max) @ Id, Vgs:

35mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 16µA

Gate Charge (Qg) (Max) @ Vgs:

17.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1105pF @ 25V

Power - Max:

43W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PG-TDSON-8-10