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Infineon Technologies IPG20N06S4L11ATMA2
- Part No.:
- IPG20N06S4L11ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Description:
- MOSFET 2N-CH 60V 20A 8TDSON
- Quantity:
Unit Price:$0
Ext Price:$0
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IPG20N06S4L11ATMA2 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4020pF @ 25V
- Power - Max:
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PG-TDSON-8-10
| Image |  |
| Part Number | IPG20N06S4L11ATMA2 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Package/Case | 8-PowerVDFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Power - Max | 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | PG-TDSON-8-10 |
- Include Parts
- Popular Search
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