Infineon Technologies IPD100N04S4L02ATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:

156 nC @ 10 V

Vgs (Max):

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:

12800 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313