Infineon Technologies IMWH170R450M1XKSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™

Package/Case:

TO-247-3

Packaging:

Tray

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

12V, 15V

Rds On (Max) @ Id, Vgs:

390mOhm @ 2A, 15V

Vgs(th) (Max) @ Id:

5.7V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:

11.7 nC @ 12 V

Vgs (Max):

15V, 12V

Input Capacitance (Ciss) (Max) @ Vds:

506 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

111W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO247-3-U04