Infineon Technologies IMW65R050M2HXKSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™ Gen 2

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V, 20V

Rds On (Max) @ Id, Vgs:

46mOhm @ 18.2A, 20V

Vgs(th) (Max) @ Id:

5.6V @ 3.7mA

Gate Charge (Qg) (Max) @ Vgs:

22 nC @ 18 V

Vgs (Max):

+23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:

790 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

153W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO247-3-40