Infineon Technologies IMDQ75R060M1HXUMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™

Package/Case:

22-PowerBSOP Module

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

750 V

Current - Continuous Drain (Id) @ 25°C:

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V, 20V

Rds On (Max) @ Id, Vgs:

55mOhm @ 11.1A, 20V

Vgs(th) (Max) @ Id:

5.6V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

23 nC @ 18 V

Vgs (Max):

+20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:

779 pF @ 500 V

FET Feature:

-

Power Dissipation (Max):

167W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HDSOP-22-1