Infineon Technologies IMBG65R015M2HXTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™ Gen 2

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

115A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V, 20V

Rds On (Max) @ Id, Vgs:

18mOhm @ 64.2A, 18V

Vgs(th) (Max) @ Id:

5.6V @ 13mA

Gate Charge (Qg) (Max) @ Vgs:

79 nC @ 18 V

Vgs (Max):

+23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:

2792 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

416W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12