Infineon Technologies DF17MR12W1M1HFB68BPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

EasyPACK™

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

45A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

15V, 18V

Rds On (Max) @ Id, Vgs:

16.2mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

149 nC @ 18 V

Vgs (Max):

+20V, -7V

Input Capacitance (Ciss) (Max) @ Vds:

4400 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-