Infineon Technologies DF11MR12W1M1B11BOMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Obsolete

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

50A

Rds On (Max) @ Id, Vgs:

23mOhm @ 50A, 15V

Vgs(th) (Max) @ Id:

5.5V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

125nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

3950pF @ 800V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

AG-EASY1BM-2